and is released for production with a JEDEC J-STD MSL 1 moisture sensitivity level JESDA “Temperature, Bias, and Operating Life”. JEDEC STANDARD Temperature, Bias, and Operating Life JESDAB ( Revision of JESDAA) DECEMBER JEDEC SOLID. JEDEC (Joint Electron Device Engineering Council) . TMCL test(TeMperature CycLing) JEDEC /JESD A From the spec: JEDEC/JESDA

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Standards & Documents Search

JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and assisting medec purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally.

JEDEC standards and publications are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. The information included in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint.

No claims to be jedd22 conformance with this standard may be made unless all requirements stated in the standard are met. By downloading this file the individual agrees not to charge for or resell the resulting material.

This document is copyrighted by the Electronic Industries Alliance and may not be reproduced without permission. Organizations may obtain permission to reproduce a limited number of copies through entering into a license agreement. A form of high temperature bias life using a short duration, popularly known as burn-in, may be used to screen for infant mortalityrelated failures.

The detailed use and application of burn-in is outside the scope of this document. NOTE Manufacturers may also specify maximum case temperatures for specific packages. Interim measurements may be performed as necessary per restrictions in clause 6. The time spent elevating the chamber to accelerated conditions, reducing chamber conditions to room ambient, and conducting the interim measurements shall not be considered a portion of the total specified test duration. A higher voltage is permitted in order to obtain lifetime acceleration from voltage as well as temperature; this voltage must not exceed the absolute maximum rated voltage for the device, and must be agreed upon by the device manufacturer.


Depending upon jfdec biasing configuration, supply and input voltages may be grounded or raised to a maximum potential chosen to ensure a stressing temperature not higher than the maximum-rated junction temperature. Device outputs may be unloaded or loaded, to kedec the specified output voltage level. If a device has a thermal shutdown feature it shall not be biased in a manner that could cause the device to go into thermal shutdown.

The devices may be operated in either a static or a pulsed forward bias mode. Pulsed operation is used to stress the devices at, or near, maximum-rated current levels. The particular bias conditions should be determined to bias the maximum number jedfc the solid state junctions in the device. The HTFB test is typically applied on power jesc22, diodes, and discrete transistor devices not typically applied to integrated circuits.

The devices may be operated in a dynamic operating mode. Typically, several input parameters may be adjusted to control internal power dissipation.

The particular bias conditions should be determined to bias the maximum number of potential operating nodes in the device. The HTOL test is typically applied on logic and memory devices. The LTOL test is intended to look for failures caused by hot carriers, and is jesc22 applied a180 memory devices or devices with submicron device dimensions.

The HTRB jdsd22 is typically applied on power devices. The devices are normally operated in a static mode at, or near, maximum-rated oxide breakdown voltage levels. The particular bias conditions should be determined to bias the maximum number of gates in a180 device. The HTGB test is typically used for power devices.

Cooling under bias is not required for a given technology if verification data is provided by the manufacturer.


Reliability Tests for Semiconductors

The interruption of bias for up to one minute, for the purpose of moving the devices to cool-down jesv22 separate from the chamber within which life testing was performed, shall not be considered removal of bias. All specified electrical measurements shall be completed prior to any reheating of the devices, except for interim measurements subject to restrictions of clause 6. NOTE Bias refers to application of voltage to power pins.

Interim and final measurements may include high temperature testing. However, testing at jeedec temperatures shall only be performed after completion of specified room and lower temperature test measurements.

Standards & Documents Search | JEDEC

After interim testing, bias shall be applied to the parts before a18 is applied to the chamber, or within ten minutes of loading the final parts into a hot chamber. Electrical testing shall be completed as soon as possible and no longer than 96 hours after removal of bias from devices.

If the availability of test equipment or other factors make meeting this kedec difficult, bias must be maintained on the devices either by extending the Bias Life Jddec or keeping the devices under bias at room temperature until this 96 hour window can be met. This and the high temperature testing restrictions of this clause jewd22 not be met if verification data for a given technology is provided.

NOTE If the devices have been removed from bias and the 96 hour window is not met, the stress must be resumed prior to completion of the measurements. The duration of this stress shall be 24 hours for any portion of each week the limit is exceeded i. After an interim measurement, the stress shall be continued from the point of interruption.