2SD Transistor Datasheet pdf, 2SD Equivalent. Parameters and Characteristics. 2SD NPN SILICON TRANSISTOR. UNISONIC TECHNOLOGIES CO., LTD. 2 of 3 QW-RG. ▫ ABSOLUTE MAXIMUM. Power Transistor (80V, 1A). 2SD / 2SD / 2SDS / 2SD ○ Features. 1) High VCEO, VCEO=80V. 2) High IC, IC=1A (DC). 3) Good hFE linearity.
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High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications.
General description PNP general-purpose transistors. Therefore, in order to dataasheet personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in 2sd189 technology with.
Product specification Supersedes data of May The product s described herein should not be used for any other application. Bfor you us our Products, plas contact our sals rprsntativ and vrify th latst spcifications: ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. Thank you for your accessing to ROHM product informations. This device is specifically designed More information.
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Low voltage PNP power transistor. More detail product informations and catalogs are available, 2sd188 contact us.
2SD Datasheet(PDF) – Rohm
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Low voltage NPN power Darlington transistor. NPN general-purpose transistors in small plastic packages.
V CE sat [V] Fig. Datasyeet shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. It’s a community-based project which helps to repair anything. NPN medium power transistor. The peripheral conditions must be taken into account when designing circuits for mass production.
NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information. High voltage fast-switching NPN power transistor. Designed for general-purpose amplifier and low speed switching applications. Emittr-Bas Voltag Collctor output capacitanc vs.
NPN EPITAXIAL SILICON TRANSISTOR
However, ROHM does not warrants that such information is error-free, adtasheet ROHM shall have no responsibility for 2se1898 damages arising from any inaccuracy or misprint of such information.
This Datasheet is presented by the m anufacturer. Emitter Current 10 0. Thrfor, in ordr to prvnt prsonal injury or fir arising from failur, plas tak safty masurs such as complying with th drating charactristics, implmnting rdundant and fir prvntion dsigns, and utilizing backups and fail-saf procdurs.
Mervin May 2 years ago Views: Thank you for your accssing to ROHM product informations. Th priphral conditions must b takn into account whn dsigning circuits for mass production. They are designed for high speed. Ground Emittr Propagation Charactristics Fig. Howvr, ROHM dos not warrants 2wd1898 such information is rror-fr, and ROHM shall hav no rsponsibility for any damags arising from any inaccuracy or misprint of such information.